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ly6251316 rev. 1.0 512k x 16 bit low power cmos sram lyontek inc. reserves the rights to change the specificati ons and products without notice. 5f, no. 2, industry e. rd. ix, science-ba sed industrial park, hsinchu 300, taiwan. tel: 886-3-6668838 fax: 886-3-6668836 0 ? revision history revision description issue date rev. 0.1 rev. 0.2 initial issue revised features & ordering information lead free and green package available to green package available added packing type in ordering information deleted t solder in absolute maximun ratings dec.25.2008 may.20.2009 rev. 0.3 rev. 0.4 revised v dr revised ordering information in page 11 sep.11.2009 aug.30.2010 rev. 0.5 rev.1.0 deleted e grade revised i sb1 in page 3 revised notes item 1 and 2 in page 3 1. v ih (max) = v cc + 2.0v for pulse width less than 6ns. 2. v il (min) = v ss - 2.0v for pulse width less than 6ns. revised ordering information a pr.12.2011 aug.29.2013
ly6251316 rev. 1.0 512k x 16 bit low power cmos sram lyontek inc. reserves the rights to change the specificati ons and products without notice. 5f, no. 2, industry e. rd. ix, science-ba sed industrial park, hsinchu 300, taiwan. tel: 886-3-6668838 fax: 886-3-6668836 1 ? features ? fast access time : 55/70ns ? low power consumption: operating current : 45/30ma (typ.) standby current : 8 a (typ.) ll-version ? single 4.5v ~ 5.5v power supply ? all inputs and outputs ttl compatible ? fully static operation ? tri-state output ? data byte control : lb# (dq0 ~ dq7) ub# (dq8 ~ dq15) ? data retention voltage : 1.5v (min.) ? green package available ? package : 48-pin 12mm x 20mm tsop-i 48-ball 6mm x 8mm tfbga general description the ly6251316 is a 8,388,608-bit low power cmos static random access memory organized as 524,288 words by 16 bits. it is fabricated using very high performance, high reliability cmos technology. its standby current is stable within the range of operating temperature. the ly6251316 is well designed for low power application, and particularly well suited for battery back-up nonvolatile memory application. the ly6251316 operates from a single power supply of 4.5v ~ 5.5v and all inputs and outputs are fully ttl compatible product family product family operating temperature vcc range speed power dissipation standby(i sb1, typ.) operating(icc,typ.) ly62l51316 0 ~ 70 4.5 ~ 5.5v 55/70ns 8a(ll) 45/30ma ly62l51316(i) -40 ~ 85 4.5 ~ 5.5v 55/70ns 8a(ll) 45/30ma functional block diagram control circuit decoder 512kx16 memory array column i/o a0-a18 vcc vss dq8-dq15 upper byte dq0-dq7 lower byte i/o data circuit ce2 we# oe# lb# ub# ce# pin description symbol description a0 - a18 address inputs dq0 ? dq15 data inputs/outputs ce#, ce2 chip enable input we# write enable input oe# output enable input lb# lower byte control ub# upper byte control v cc power supply v ss ground
ly6251316 rev. 1.0 512k x 16 bit low power cmos sram lyontek inc. reserves the rights to change the specificati ons and products without notice. 5f, no. 2, industry e. rd. ix, science-ba sed industrial park, hsinchu 300, taiwan. tel: 886-3-6668838 fax: 886-3-6668836 2 ? pin configuration tfbga nc a3 a10 a9 a11 a0 a14 a8 nc we# dq9 dq14 dq15 a18 vss ce2 a13 dq8 vcc vcc dq7 a15 vss ce# lb# dq6 dq2 dq0 a2 oe# a1 a6 a5 a4 ub# 123456 h g c d e f a b a12 nc a17 a7 a16 dq10 dq11 dq12 dq13 dq5 dq4 dq3 dq1 absolute maximun ratings* parameter symbol rating unit voltage on v cc relative to v ss v t1 -0.5 to 6.5 v voltage on any other pin relative to v ss v t2 -0.5 to v cc +0.5 v operating temperature t a 0 to 70(c grade) -40 to 85(i grade) storage temperature t stg -65 to 150 power dissipation p d 1 w dc output current i out 50 ma *stresses greater than those listed under ?absolute maximum rating s? may cause permanent damage to the device. this is a stress rating only and functional operation of the device or any other conditions above t hose indicated in the operational sections of this s pecification is not implied. exposure to the absolute maximum rating c onditions for extended period may affect device reliability.
ly6251316 rev. 1.0 512k x 16 bit low power cmos sram lyontek inc. reserves the rights to change the specificati ons and products without notice. 5f, no. 2, industry e. rd. ix, science-ba sed industrial park, hsinchu 300, taiwan. tel: 886-3-6668838 fax: 886-3-6668836 3 ? truth table mode ce# ce2 oe# we# lb# ub# i/o operation supply current dq0-dq7 dq8-dq15 standby h x x x l x x x x x x x x x h x x h high ? z high ? z high ? z high ? z high ? z high ? z i sb ,i sb1 output disable l l h h h h h h l x x l high ? z high ? z high ? z high ? z i cc ,i cc1 read l l l h h h l l l h h h l h l h l l d out high ? z d out high ? z d out d out i cc ,i cc1 write l l l h h h x x x l l l l h l h l l d in high ? z d in high ? z d in d in i cc ,i cc1 note: h = v ih , l = v il , x = don't care. dc electrical characteristics parameter symbol test condition min. typ. * 4 max. unit supply voltage v cc 4.5 5.0 5.5 v input high voltage v ih *1 2.4 - v cc +0.3 v input low voltage v il *2 - 0.2 - 0.6 v input leakage current i li v cc R v in R v ss - 1 - 1 a output leakage current i lo v cc R v out R v ss output disabled - 1 - 1 a output high voltage v oh i oh = -1m a 2.4 - - v output low voltage v ol i ol = 2m a - - 0.4 v average operating power supply current i cc cycle time = min. ce# = v il and ce2 = v ih i i/o = 0ma other pins at v il or v ih - 55 - 45 60 ma - 70 - 30 50 ma i cc1 cycle time = 1 s ce# Q 0.2v and ce2 R v cc -0.2v i i/o = 0ma other pins at 0.2v or v cc -0.2v - 6 12 ma standby power supply current i sb ce# = v ih or ce2 = v il other pins at v il or v ih - 0.2 2 ma i sb1 ce# v R cc -0.2v or ce2 Q 0.2v other pins at 0.2v or v cc -0.2v -ll - 8 30 a -lli - 8 50 a notes: 1. v ih (max) = v cc + 2.0v for pulse width less than 6ns. 2. v il (min) = v ss - 2.0v for pulse width less than 6ns. 3. over/undershoot specifications are characterized, not 100% tested. 4. typical values are included for reference only and are not guaranteed or tested. typical values are measured at v cc = v cc (typ.) and t a = 25
ly6251316 rev. 1.0 512k x 16 bit low power cmos sram lyontek inc. reserves the rights to change the specificati ons and products without notice. 5f, no. 2, industry e. rd. ix, science-ba sed industrial park, hsinchu 300, taiwan. tel: 886-3-6668838 fax: 886-3-6668836 4 ? capacitance (t a = 25 , f = 1.0mhz) parameter symbol min. ma x unit input capacitance c in - 6 pf input/output capacitance c i/o - 8 pf note : these parameters are guaranteed by devic e characterization, but not production tested. ac test conditions input pulse levels 0.2v to v cc -0.2v input rise and fall times 3ns input and output timing reference levels 1.5v output load c l = 30pf + 1ttl, i oh / i ol = -1ma/2m a ac electrical characteristics (1) read cycle parameter sym. ly6251316-55 ly6251316-70 unit min. max. min. max. read cycle time t rc 55 - 70 - ns a ddress access time t aa - 55 - 70 ns chip enable access time t ace - 55 - 70 ns output enable access time t oe - 30 - 35 ns chip enable to output in low-z t clz * 10 - 10 - ns output enable to output in low-z t olz * 5 - 5 - ns chip disable to output in high-z t chz * - 20 - 25 ns output disable to output in high-z t ohz * - 20 - 25 ns output hold from address change t oh 10 - 10 - ns lb#, ub# a ccess time t ba - 55 - 70 ns lb#, ub# to high-z output t bhz * - 25 - 30 ns lb#, ub# to low-z output t blz * 10 - 10 - ns (2) write cycle parameter sym. ly6251316-55 ly6251316-70 unit min. max. min. max. write cycle time t wc 55 - 70 - ns a ddress valid to end of write t aw 50 - 60 - ns chip enable to end of write t cw 50 - 60 - ns a ddress set-up time t as 0-0- ns write pulse width t wp 45 - 55 - ns write recovery time t wr 0-0- ns data to write time overlap t dw 25 - 30 - ns data hold from end of write time t dh 0-0- ns output active from end of write t ow * 5-5- ns write to output in high-z t whz * - 20 - 25 ns lb#, ub# valid to end of write t bw 45 - 60 - ns *these parameters are guaranteed by device c haracterization, but not production tested.
ly6251316 rev. 1.0 512k x 16 bit low power cmos sram lyontek inc. reserves the rights to change the specificati ons and products without notice. 5f, no. 2, industry e. rd. ix, science-ba sed industrial park, hsinchu 300, taiwan. tel: 886-3-6668838 fax: 886-3-6668836 5 ? timing waveforms read cycle 1 (address controlled) (1,2) dout data valid t oh t aa address t rc previous data valid read cycle 2 (ce# and ce2 and oe# controlled) (1,3,4,5) dout data valid high-z high-z t clz t olz t chz t ohz t oh oe# t oe lb#,ub# t bhz t ace t ba t blz ce# t aa address t rc ce2 notes : 1.we#is high for read cycle. 2.device is continuously selected oe# = low, ce# = low, ce2 = high, lb# or ub# = low . 3.address must be valid prior to or coincident with ce# = low, ce2 = high, lb# or ub# = low transition; otherwise t aa is the limiting parameter. 4.t clz , t blz, t olz , t chz, t bhz and t ohz are specified with c l = 5pf. transition is measured 500mv from steady state. 5.at any given temperature and voltage condition, t chz is less than t clz , t bhz is less than t blz , t ohz is less than t olz.
ly6251316 rev. 1.0 512k x 16 bit low power cmos sram lyontek inc. reserves the rights to change the specificati ons and products without notice. 5f, no. 2, industry e. rd. ix, science-ba sed industrial park, hsinchu 300, taiwan. tel: 886-3-6668838 fax: 886-3-6668836 6 ? write cycle 1 (we# controlled) (1,2,3,5,6) dout din data valid t dw t dh (4) high-z t whz we# t wp t cw t wr t as (4) t ow lb#,ub# t bw ce# t aw address t wc ce2 write cycle 2 (ce# and ce2 controlled) (1,2,5,6) dout din data valid t dw t dh (4) high-z t whz we# lb#,ub# t cw t wp t bw ce# address t wr t as t aw t wc ce2
ly6251316 rev. 1.0 512k x 16 bit low power cmos sram lyontek inc. reserves the rights to change the specificati ons and products without notice. 5f, no. 2, industry e. rd. ix, science-ba sed industrial park, hsinchu 300, taiwan. tel: 886-3-6668838 fax: 886-3-6668836 7 ? write cycle 3 (lb# ,ub# controlled) (1,2,5,6) dout din data valid t dw t dh (4) high-z t whz we# lb#,ub# t cw t as t wp t bw ce# address t wr t aw t wc ce2 notes : 1.we#,ce#, lb#, ub# must be high or ce2 must be low during all address transitions. 2.a write occurs during the overlap of a low ce#, high ce2, low we#, lb# or ub# = low. 3.during a we# controlled write cycle with oe# low, t wp must be greater than t whz + t dw to allow the drivers to turn off and data to be placed on the bus. 4.during this period, i/o pins are in the out put state, and input signals must not be applied. 5.if the ce#, lb#, ub# low transition and ce2 high transition o ccurs simultaneously with or after we# low transition, the outpu ts remain in a high impedance state. 6.t ow and t whz are specified with c l = 5pf. transition is measured 500mv from steady state.
ly6251316 rev. 1.0 512k x 16 bit low power cmos sram lyontek inc. reserves the rights to change the specificati ons and products without notice. 5f, no. 2, industry e. rd. ix, science-ba sed industrial park, hsinchu 300, taiwan. tel: 886-3-6668838 fax: 886-3-6668836 8 ? data retention characteristics parameter symbol test cond ition min. typ. max. unit v cc for data retention v dr ce# v R cc - 0.2v or ce2 Q 0.2v 1.5 - 5.5 v data retention current i dr v cc = 1.5v ce# v R cc -0.2v or ce2 Q 0.2v other pins at 0.2v or v cc -0.2v -ll - 5 30 a -lli - 5 50 a chip disable to data retention time t cdr see data retention waveforms (below) 0 - - ns recovery time t r t rc * - - ns t rc * = read cycle time data retention waveform low vcc data retention waveform (1) (ce# controlled) vcc ce# v dr R 1.5v ce# v R cc-0.2v vcc(min.) v ih t r t cdr v ih vcc(min.) low vcc data retention waveform (2) (ce2 controlled) vcc ce2 v dr R 1.5v ce2 Q 0.2v vcc(min.) v il t r t cdr v il vcc(min.) low vcc data retention waveform (3) (lb#, ub# controlled) vcc lb#,ub# v dr R 1.5v lb#,ub# v R cc-0.2v vcc(min.) v ih t r t cdr v ih vcc(min.)
ly6251316 rev. 1.0 512k x 16 bit low power cmos sram lyontek inc. reserves the rights to change the specificati ons and products without notice. 5f, no. 2, industry e. rd. ix, science-ba sed industrial park, hsinchu 300, taiwan. tel: 886-3-6668838 fax: 886-3-6668836 9 ? package outline dimension 48-pin 12mm x 20mm tsop-i package outline dimension
ly6251316 rev. 1.0 512k x 16 bit low power cmos sram lyontek inc. reserves the rights to change the specificati ons and products without notice. 5f, no. 2, industry e. rd. ix, science-ba sed industrial park, hsinchu 300, taiwan. tel: 886-3-6668838 fax: 886-3-6668836 10 ? 48-ball 6mm 8mm tfbga package outline dimension
ly6251316 rev. 1.0 512k x 16 bit low power cmos sram lyontek inc. reserves the rights to change the specificati ons and products without notice. 5f, no. 2, industry e. rd. ix, science-ba sed industrial park, hsinchu 300, taiwan. tel: 886-3-6668838 fax: 886-3-6668836 11 ? ordering information package type access time (speed)(ns) powe r type temperature range( ) packing type lyontek item no. 48pin12mmx20mm tsop-i 55 ultra low power 0 ~70 tray ly6251316ll-55ll tape reel LY6251316LL-55LLT -40 ~85 tray ly6251316ll-55lli tape reel ly6251316ll-55llit 70 ultra low power 0 ~70 tray ly6251316ll-70ll tape reel ly6251316ll-70llt -40 ~85 tray ly6251316ll-70lli tape reel ly6251316ll-70llit 48-ball 6mmx8mm tfbga 55 ultra low power 0 ~70 tray ly6251316gl-55ll tape reel ly6251316gl-55llt -40 ~85 tray ly6251316gl-55lli tape reel ly6251316gl-55llit 70 ultra low power 0 ~70 tray ly6251316gl-70ll tape reel ly6251316gl-70llt -40 ~85 tray ly6251316gl-70lli tape reel ly6251316gl-70llit
ly6251316 rev. 1.0 512k x 16 bit low power cmos sram lyontek inc. reserves the rights to change the specificati ons and products without notice. 5f, no. 2, industry e. rd. ix, science-ba sed industrial park, hsinchu 300, taiwan. tel: 886-3-6668838 fax: 886-3-6668836 12 ? this page is left blank intentionally.

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